Dynamic Random Access Memory Market was valued at 67 Bn. USD in 2020. Residential, one of the segments reviewed in our report is dominating the Global Dynamic Random Access Memory Market.
Dynamic Random Access Memory Market Overview:DRAM is a type of computer memory that is frequently utilized. A data bit is stored in the capacitor of each DRAM memory cell, which is made up of a transistor and a capacitor within an integrated circuit. Because transistors always leak a little amount of charge, the capacitors slowly discharge, causing the information stored in them to drain; as a result, DRAM must be refreshed (given a new electronic charge) every few milliseconds in order to retain data. In comparison to other types of memory, DRAM's key advantages are its simple architecture and inexpensive cost. DRAM's key drawbacks are its high volatility and high power consumption as compared to alternative memory types. To know about the Research Methodology :- Request Free Sample Report 2020 is considered as a base year to forecast the Market from 2021 to 2027. 2020’s Market size is estimated on real numbers and outputs of the key players and major players across the globe. Past five years trends are considered while forecasting the Market through 2027. 2020 is a year of exception and analyzed specially with the impact of lockdown by region.
Dynamic Random Access Memory Market Dynamics:Dynamic RAMs are used in the computing, infrastructure, information, and entertainment industries. Mobile phones, personal computers, workstations, portable gaming devices, PDAs, and tablets are all examples of computing devices that utilize them. Dynamic RAM is used in these devices to increase operational speed. Due to their expanding penetration and lowering pricing, mobile phones are likely to represent a significant proportion of the DRAM industry, resulting in increased consumer adoption. Infrastructure devices such as servers, networking equipment, and storage systems all employ dynamic RAM. DRAMs are widely utilized in entertainment applications, including camcorders, game consoles, and video game consoles. AI-based servers, according to the Semiconductors manufacturers Association (SMAI), require six times the amount of DRAM as regular workload servers. This in and of itself demonstrates a strong demand driven exclusively by the server. Consumer demand for smartphones and other consumer devices is expected to decline by June 2020, but data center demand is expected to stay high. It also intends to move its supply of DRAM and flash memory chips from the smartphone sector to the data center business. Its sample of DDR5 Registered DIMMs (RDIMMs) in early 2020, based on 1znm process technology, foreshadows advancements in the next generation of server workloads. Increasing penetration of memory ICs and microcontrollers in the production of sensor technologies for the automotive sector and significant developments in smartphones and AI of vehicles are the key factors driving demand for the DRAM. High R&D expenses, circuit integration constraints, and growing design and fabrication costs, on the other hand, could impede market growth throughout the forecast period. NAND flash memory, for example, may constitute a threat to the DRAM business. More restraints and challenges are summarized in the MMR report with real numbers from primary research and trusted secondary data sources. Moreover, data is collected from the perspective of various end-users who are expected to be benefitting from the analytics presented in the report.
Supplier profitability may be hampered if overall revenue does not keep up with continuously rising CAPEX:In terms of DRAM suppliers' CAPEX (capital expenditures), there has been a gradual increase in their CAPEX to sales ratio in recent years for two reasons. First, DRAM manufacturing technological advancement is approaching a physical bottleneck. After process nodes shrank below the 20nm level, die advancements became increasingly constrained. Micron's 1alpha nm process can enhance bits per wafer by about 30%, however the main suppliers' recent 1Xnm-to-1Ynm migrations and subsequent 1Ynm-to-1Znm migrations have only generated 15% increases in bits per wafer. Samsung and SK hynix have already integrated EUV lithography into their most advanced process technologies, indicating future technological breakthroughs. Orders for EUV lithography tools, on the other hand, have a substantially longer lead time and are more expensive. As a result, the three major vendors have set aside a significant amount of capital to place orders for EUV lithography tools ahead of schedule. Despite the cyclical price decline, the oligopolistic structure of the DRAM market has contributed to building a regime in which there is very little possibility of a supplier's ASP dipping below its fully-loaded cost. Furthermore, DRAM manufacturers have amassed a sizable profit from their products. Due to the challenges of die shrinkage, suppliers ranging from the three largest to those with a smaller market share (such as Nanya Tech and Winbond) have devised concrete plans for capacity development. These plans have, in turn, become the other major driver of the CAPEX to sales ratio's continued rise. MMR projects a 15% YoY decrease in DRAM ASP for 2022, based on an examination of DRAM sufficiency ratio (which refers to the surplus of supply in contrast to demand) for each quarter in 2022. Prices are expected to fall the most in the first half of the year. However, the reduction in DRAM ASP is expected to slow in 2022, owing to a higher DDR5 adoption rate and the onset of peak seasonal demand.
Dynamic Random Access Memory Market Segmentation:
Automotive segment is dominating the Dynamic Random Access Memory market in terms of Applicability:The automotive industry contributes to a large increase in DRAM output. Driver Awareness Systems (ADAS) and self-driving vehicle systems have become more demanding, necessitating the memory capacity and bandwidth that DRAM can provide. As a result, the market landscape has been forced to comply with safety-critical automotive systems, as well as typical worries about error rates and satisfying demanding automotive standards like ISO 26262. Increasing penetration of EVs across Europe and North American region is considered to drive the demand for DDR3 and DDR4 DRAM as EVs use sensing technologies in order to compile through ADAs database and provide best user experience possible. E.g., Valens and Micron teamed together due to increased demand for in-vehicle infotainment systems and ultra-high-speed in-vehicle connection. As a result, the alliance will work to develop automotive platforms that will meet the needs of driverless vehicles, advanced driver assistance systems (ADAS), and next-generation in-vehicle entertainment systems.
Dynamic Random Access memory Market Trends:1. DDR5 DRAM: The recently introduced DDR5 DRAM standard allows servers and system designers to use densities of up to 64 GB DRAMs in a single-die package, enabling for higher-capacity DRAM devices. In a single-die device, DDR4 can support up to 16 GB of DRAM. So, while DDR4 LRDIMMs can hold up to 64 GB of data, DDR5 LRDIMMs can hold up to 256 GB. To enable higher-capacity DIMMs, DDR5 has on-die ECC, error transparency mode, post-package repair, and read and write CRC modes. Finally, DDR5 data buffer chips efficiently reduce data bus load, allowing higher-capacity DRAMs on the DIMM without compromising latency. 2. Demand for hyper scale data centres: DDR5 is expected to enter volume production by the end of 2021, with the first installations aimed at hyperscale data centres, which are quickly becoming essential data network hubs. There were 541 hyperscale data centres in operation as of mid-2020, with another 176 in various phases of development. Since 2015, the number of operational hyperscale data centres has more than doubled. We expect hyperscale data centre building to pick up in 2021 to accommodate the zetabytes (1024 Petabytes) of data generated and consumed by smartphones, PCs, game consoles, IoT devices, ADAS-enabled automobiles, and other gadgets. 3. AI/ML Adherence: Since 2012, AI/ML neural networks have grown their training models by a factor of ten every year. This tendency indicates that by 2021, training models will have well over a trillion parameters. Indeed, OpenAI announced a 175-billion-parameter GPT-3 language model in late 2020, marking a 100-fold increase over GPT-2's 1.5 billion parameters (introduced in 2019). GDDR and HBM memory will continue to evolve as the key high-performance memory solutions for AI/ML in 2021. GDDR has a high bandwidth and a robustness that comes from almost two decades of high-volume production. These features make it an excellent alternative for high-reliability AI/ML inference applications like advanced driver assistance systems (ADAS). The performance of HBM is unrivalled for applications like AI/ML training, which has an insatiable requirement for bandwidth.
China’s memory Ambitions are restraining the APAC DRAM market:Because the cost of importing nearly all of China's necessities is so expensive, the country has started a semiconductor self-sufficiency effort. If it uses international trade gains to grow domestic semiconductor companies, it will save money and become a wealthy country in the long run. China plans to make 70% of its own chips by 2025," according to Nikkei Asian Review. The current rate, estimated to be between 10% and 30%, leaves Chinese firms reliant and vulnerable on foreign chipmakers. Samsung, SK Hynix, and Micron are the three main players in the DRAM market. The industry cannot afford another supplier due to the high cost of new fabs to develop the latest DRAM technology, lowering market demand growth, and increased areal density. China Inc. will be a fourth supplier if it enters the DRAM market. According to Nikkei Survey, the DRAM business is expected to reduce to three suppliers. Samsung, SK Hynix, or Micron will either go out of business or be bought in China. The objective of the report is to present a comprehensive analysis of the Dynamic Random Access Memory Market to the stakeholders in the industry. The past and current status of the industry with the forecasted Market size and trends are presented in the report with the analysis of complicated data in simple language. The report covers all the aspects of the industry with a dedicated study of key players that include Market leaders, followers, and new entrants. PORTER, PESTEL analysis with the potential impact of micro-economic factors of the Market have been presented in the report. External as well as internal factors that are supposed to affect the business positively or negatively have been analyzed, which will give a clear futuristic view of the industry to the decision-makers. The report also helps in understanding the Dynamic Random Access Memory Market dynamics, structure by analyzing the Market segments and project the Dynamic Random Access Memory Market size. Clear representation of competitive analysis of key players by Type, price, financial position, Type portfolio, growth strategies, and regional presence in the Dynamic Random Access Memory Market make the report investor’s guide.
Dynamic Random Access Memory Market Scope: Inquire before buying
Dynamic Random Access Memory Market, by region• North America • Europe • Asia Pacific • Middle East and Africa • South America
Dynamic Random Access Memory Market Key Players• SK Hynix Inc. • Micron Technology Inc. • Samsung Electronics Co. Ltd • Nanya Technology Corporation • Winbond Electronics Corporation • Intel Corporation • Powerchip Technology Corporation • Transcend Information, Inc. • ATP Electronics, Inc. • Integrated Silicon Solution Inc. • Kingston Technology Corporation • Texas Instruments • Etron Technology Inc. • Advanced Micro Device (AMD) • Elpida Memory
FAQ’S:1) What is the share of the Dynamic Random Access Memory Market in 2020? Answer: The Dynamic Random Access Memory Market was accounted for 67 Bn. Units in the year 2020. 2) Which Application segment is dominating the Dynamic Random Access Memory Market? Answer: Automotive segment is dominating the market owing to increasing penetration of EVs across the globe and use of high sensing drivers including ADAS which uses DRAM predominantly. 3) What are the key players in the Dynamic Random Access Memory Market? Answer: SK Hynix Inc., Micron Technology Inc., Samsung Electronics Co. Ltd, Nanya Technology Corporation, Winbond Electronics Corporation, Intel Corporation, Powerchip Technology Corporation, Transcend Information, Inc., ATP Electronics, Inc., Integrated Silicon Solution Inc., Kingston Technology Corporation, Texas Instruments, Etron Technology Inc., Advanced Micro Device (AMD), Elpida Memory 4) Which factor acts as the driving factor for the growth of the Dynamic Random Access Memory Market? Answer: Increasing penetration of memory ICs and microcontrollers in production of sensor technologies for automotive sector and significant developments in smartphones and AI of vehicles are the key factors driving demand for the DRAM market. 5) What factors are restraining the growth of the Dynamic Random Access Memory Market? Answer: High maintenance rate of DRAM and high volatility of semiconductor market are the key factors restraining the market growth.
1. Dynamic Random Access Memory Market: Research Methodology 2. Dynamic Random Access Memory Market: Executive Summary 2.1. Market Overview and Definitions 2.1.1. Introduction to Dynamic Random Access Memory Market 2.2. Summary 2.2.1. Key Findings 2.2.2. Recommendations for Investors 2.2.3. Recommendations for Market Leaders 2.2.4. Recommendations for New Market Entry 3. Dynamic Random Access Memory Market: Competitive Analysis 3.1. MMR Competition Matrix 3.1.1. Market Structure by region 3.1.2. Competitive Benchmarking of Key Players 3.2. Consolidation in the Market 3.2.1 M&A by region 3.3. Key Developments by Companies 3.4. Market Drivers 3.5. Market Restraints 3.6. Market Opportunities 3.7. Market Challenges 3.8. Market Dynamics 3.9. PORTERS Five Forces Analysis 3.10. PESTLE 3.11. Regulatory Landscape by region • North America • Europe • Asia Pacific • The Middle East and Africa • Latin America 3.12. COVID-19 Impact 4. Dynamic Random Access Memory Market Segmentation 4.1. Dynamic Random Access Memory Market, by Type (2020-2027) • FPM (Fast Page Mode) • Burst Extended data output • Synchronous DRAM • Asynchronous DRAM 4.2. Dynamic Random Access Memory Market, by Technology (2020-2027) • DDR2 • DDR3 • DDR4 • DDR5 • Graphics and Mobile Setups 4.3. Dynamic Random Access Memory Market, by Application (2020-2027) • Gaming PC/Laptops • Networking • Automotive • Mobile Devices • Servers • Others 5. North America Dynamic Random Access Memory Market(2020-2027) 5.1. Dynamic Random Access Memory Market, by Type (2020-2027) • FPM (Fast Page Mode) • Burst Extended data output • Synchronous DRAM • Asynchronous DRAM 5.2. Dynamic Random Access Memory Market, by Technology (2020-2027) • DDR2 • DDR3 • DDR4 • DDR5 • Graphics and Mobile Setups 5.3. Dynamic Random Access Memory Market, by Application (2020-2027) • Gaming PC/Laptops • Networking • Automotive • Mobile Devices • Servers • Others 5.4. North America Dynamic Random Access Memory Market, by Country (2020-2027) • United States • Canada • Mexico 6. European Dynamic Random Access Memory Market (2020-2027) 6.1. European Dynamic Random Access Memory Market, by Type (2020-2027) 6.2. European Dynamic Random Access Memory Market, by Technology (2020-2027) 6.3. European Dynamic Random Access Memory Market, by Application (2020-2027) 6.4. European Dynamic Random Access Memory Market, by Country (2020-2027) • UK • France • Germany • Italy • Spain • Sweden • Austria • Rest Of Europe 7. Asia Pacific Dynamic Random Access Memory Market (2020-2027) 7.1. Asia Pacific Dynamic Random Access Memory Market, by Type (2020-2027) 7.2. Asia Pacific Dynamic Random Access Memory Market, by Technology (2020-2027) 7.3. Asia Pacific Dynamic Random Access Memory Market, by Application (2020-2027) 7.4. Asia Pacific Dynamic Random Access Memory Market, by Country (2020-2027) • China • India • Japan • South Korea • Australia • ASEAN • Rest Of APAC 8. Middle East and Africa Dynamic Random Access Memory Market (2020-2027) 8.1. Middle East and Africa Dynamic Random Access Memory Market, by Type (2020-2027) 8.2. Middle East and Africa Dynamic Random Access Memory Market, by Technology (2020-2027) 8.3. Middle East and Africa Dynamic Random Access Memory Market, by Application (2020-2027) 8.4. Middle East and Africa Dynamic Random Access Memory Market, by Country (2020-2027) • South Africa • GCC • Egypt • Nigeria • Rest Of ME&A 9. Latin America Dynamic Random Access Memory Market (2020-2027) 9.1. Latin America Dynamic Random Access Memory Market, by Type (2020-2027) 9.2. Latin America Dynamic Random Access Memory Market, by Technology (2020-2027) 9.3. Latin America Dynamic Random Access Memory Market, by Application (2020-2027) 9.4. Latin America Dynamic Random Access Memory Market, by Country (2020-2027) • Brazil • Argentina • Rest Of Latin America 10. Company Profile: Key players 10.1. SK Hynix, Inc. 10.1.1. Company Overview 10.1.2. Financial Overview 10.1.3. Global Presence 10.1.4. Capacity Portfolio 10.1.5. Business Strategy 10.1.6. Recent Developments 10.2. Micron Technology Inc. 10.3. Samsung Electronics Co. Ltd 10.4. Nanya Technology Corporation 10.5. Winbond Electronics Corporation 10.6. Intel Corporation 10.7. Powerchip Technology Corporation 10.8. Transcend Information, Inc. 10.9. ATP Electronics, Inc. 10.10. Integrated Silicon Solution Inc. 10.11. Kingston Technology Corporation 10.12. Texas Instruments 10.13. Etron Technology Inc. 10.14. Advanced Micro Device (AMD) 10.15. Elpida Memory